Samsung develops LLW DRAM for terminal-side AI and future XR headsets

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According to previous news, SK Hynix is ​​cooperating with Vision Pro to exclusively provide DRAM memory chips. This chip combined with the R1 chip can achieve real-time high-speed high-definition video processing

According to the latest news, Samsung Electronics is developing low-latency wide IO (LLW) DRAM and plans to start mass production at the end of next year

Terminal side AI diagram, source: Network

Currently, the most common memory chip for mobile electronic devices is LPDDR, while LLW DRAM increases bandwidth by expanding the input/output (I/O) path. Since bandwidth is directly proportional to transmission speed, this type of DRAM can further improve the efficiency of processing equipment to generate data in real time

According to information, it is understood that LLW DRAM can not only be used in new generation XR terminal equipment, but also can be used in products equipped with terminal-side AI. Different from cloud AI, terminal-side AI needs to execute hundreds of millions of instructions directly on the device, so DRAM used to enhance auxiliary computing is particularly important to quickly process large amounts of data without consuming too much power

In other aspects, Samsung Electronics has been developing lightweight On-Device AI algorithms since 2020 and applying them to systems on chips (SoCs), memories and sensors, which can enhance its On-Device AI semiconductor field competitiveness. The algorithm will be first used in Samsung's internally developed generative AI model "Gaussian" and is expected to fully occupy the market next year.

There is no need to change the original meaning, the content that needs to be rewritten is: Source: Business Korea

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