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According to news from this site on April 23, domestic leading company Yingren Technology recently stated on the WeChat platform that its new solid-state drive solution can outperform PCIe Gen4x4 in the sequential read segment using 1200MT/s QLC. "Full speed" is 7000 MB/s.
Yingren Technology said that it has demonstrated the new solution at the CFMS 2024 Storage Summit on March 20.
This solution is equipped with 144-layer 3D QLC flash memory (model N38A) from Solidigm and PCIe Gen4 external cache-less master control from Ingen.
According to Yingren, The supply of 3D NAND flash memory with the latest process (200 layers) on the market this year is gradually becoming tight. How to make full use of mature process products with low flash IO interface speed has become a model. Issues for group manufacturers;
At the same time, the new generation of QLC flash memory has significantly improved its lifespan and performance, and can occupy more markets with "ultimate cost performance".
The test results show that this solution ran a sequential read speed of 7446.77MB/s in the Crystal Disk Mark 8 benchmark test with a sample size of 1GiB, and also achieved a sequential write speed of 6488.36MB/s. .
Note from this site: According to general rules of experience, if a 4-channel master is used, it is difficult to achieve PCIe Gen4x4 read "full speed" even with a 2000MT/s rate flash memory. "speed" goal. Therefore, Yingren’s new solution is likely to use an 8-channel master control.
This solid-state drive solution also supports host direct write QLC. Compared with the traditional solution, the dynamic SLC external cache write performance is improved by about 50% to 100%.
Yingren Technology confirmed that the solution has now entered the mass production stage, and the corresponding products will be available within this quarter.
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