Sources say Samsung Electronics will mass-produce 9th generation V-NAND flash memory as soon as later this month

News from this site on April 12, according to Korean media Hankyung, Samsung will achieve mass production of 9th generation V-NAND flash memory as soon as later this month.

Samsung executive Jung-Bae Lee said in October that its next-generation NAND flash memory will be mass-produced "early this year" and have an industry-leading number of stacking layers.

Samsung mass-produced 236-layer 8th-generation V-NAND in November 2022, which means the gap between the two generations is about a year and a half.

▲Samsung’s 8th generation V-NAND flash memory

Hankyung said that the number of stacking layers of the 9th generation V-NAND flash memory will be 290, but this time Earlier reports from the website mentioned that Samsung demonstrated a 280-layer stacked QLC flash memory at an academic conference, and the flash memory IO interface rate reached 3.2GB/s.

Samsung will continue to use the structure of dual flash memory stacks on the 9th generation V-NAND to achieve simpler processes and lower manufacturing costs. Samsung will switch to a three-stack structure for the 10th generation V-NAND flash memory expected to be launched next year.

The new structure will further increase the maximum number of possible stacking layers of 3D flash memory, but it will also introduce more complexity in stack alignment. SK Hynix will use this to mass-produce 321-layer NAND flash memory next year. a structure.

Semiconductor industry observer TechInsights said Samsung’s 10th generation V-NAND flash memory is expected to reach 430 layers, further improving stacking advantages.

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