SK Hynix and Samsung Electronics are expected to start mass production of 1c nanometer DRAM memory within this year

According to news from this site on April 9, according to Korean media Businesskorea, SK Hynix and Samsung Electronics are expected to start mass production of 1c nanometer DRAM memory within the year.

After entering the 20~10nm process, memory generations are generally called in the form of 1 letter. 1c nm corresponds to Micron’s 1-gamma nm expression and is the sixth 10 nm process generation. Samsung calls the previous generation 1b nm “12nm class”.

Samsung recently stated at the industry conference Memcon 2024 that it plans to achieve mass production of the 1c nm process by the end of this year ;

Recently, according to industry sources, SK Hynix has internally formulated a roadmap for mass production of 1cnm DRAM memory in the third quarter. SK Hynix plans to prepare in advance and supply 1c nm memory to major customers such as Microsoft and Amazon as soon as it passes industry verification.

For Samsung Electronics and SK Hynix, their next-generation memory products are expected to increase the usage of EUV lithography, reduce line width, increase speed and bring better energy efficiency;

Reference this The website previously reported that Micron will introduce EUV technology for the first time at the 1-gamma nanometer node, and mass production is expected to be in 2025. Trial production has already been carried out.

Taiwanese company Nanya is developing its first-generation DDR5 memory product, which is expected to be launched this year.

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