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Micron: HBM memory consumes 3 times the wafer volume, and production capacity is basically booked for next year

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2024-03-22 20:16:051175browse

According to news from this site on March 21, Micron held a conference call after releasing its quarterly financial report. At the conference, Micron CEO Sanjay Mehrotra said that compared to traditional memory, HBM consumes significantly more wafers.

Micron stated that when producing the same capacity at the same node, the current most advanced HBM3E memory consumes three times the amount of wafers as standard DDR5, and it is expected that as performance increases With the increase in upgrade and packaging complexity, this ratio will further increase in the future HBM4.

美光:HBM 内存消耗 3 倍晶圆量,明年产能基本预定完毕

Referring to previous reports on this site, This high ratio is partly due to HBM’s low yield. HBM memory is stacked with multiple layers of DRAM memory TSV connections. A problem with one layer means the entire stack is scrapped. At present, the yield rate of HBM is only about 2/3, which is significantly lower than that of traditional memory products.

Currently, due to the booming development of the AI ​​field, the popular product HBM has been in short supply. SK Hynix has sold out its HBM production capacity this year, and Samsung has already completed quota negotiations for most of this year's production capacity. Mehrotra further stated this time that Micron’s HBM production capacity is basically booked even for next year. The high demand for HBM, coupled with its high consumption of wafers, has squeezed the production volume of other DRAMs. Micron said

non-HBM memory is facing supply constraints

. In addition, Micron claimed that its 8Hi HBM3E memory has begun shipping in high volumes and could contribute hundreds of millions of dollars in revenue in the fiscal year ending in August.

For the 12-layer stacked 36GB HBM3E, Mehrotra said this future product had completed sampling earlier this month and is targeting high-volume production by 2025.

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