Renesas Electronics announces acquisition of Transphorm for US$339 million to expand gallium nitride GaN product layout

Renesas Electronics announced that it will acquire Transphorm, a US GaN power semiconductor supplier, at a price of US$5.10 per share for a total of US$339 million (approximately 2.434 billion yuan). This purchase price represents a premium of approximately 35% to the closing price on January 10.

Officials stated that the acquisition will give Renesas access to GaN in-house technology and further expand its business scope in fast-growing markets, including electric vehicles. Automotive, computing, renewable energy, industrial power, and fast chargers/adapters.

GaN technology features higher switching frequencies, lower power losses and smaller form factors, enabling more efficient, lighter structure and lower overall cost. According to industry research, demand for GaN is expected to grow by more than 50% annually.

Renesas announced that it will develop new enhanced power solutions using Transphorm’s automotive-grade GaN technology. These include X-in-1 powertrain solutions for electric vehicles, as well as other solutions for computing, energy, industrial and consumer applications. This will further drive energy efficiency and performance enhancements in electric vehicles and across industries.

Renesas Electronics also pointed out that as the global demand for efficient power systems increases, related industries are gradually turning to wide bandgap (WBG) represented by silicon carbide (SiC) and gallium nitride (GaN). Material. To adapt to this trend, Renesas has established an in-house silicon carbide (SiC) production line and signed a 10-year silicon carbide (SiC) wafer supply agreement with suppliers. This will help meet market demand for efficient power systems and promote the development of related industries.

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