Samsung is expected to mass-produce next-generation 3nm/4nm node technology in the second half of next year

According to news from this website on November 3, Samsung Electronics revealed to investors this week that it will transition and promote photolithography technology in the near future, and plans to launch the second-generation 3nm process technology (SF3) to the market in the second half of 2024. As well as the mass production version of 4nm process (SF4X) products.

Source: Samsung Electronics

A statement from the company read:

We intend to start mass production of the second-generation 3nm process and the fourth-generation 4nm process for high-performance computing in the second half of this year to further enhance our technological competitiveness

With mobile needs The market is expected to see a growth trend due to the rebound in demand for high-performance computing (HPC) upgrade. According to the information released so far, the node is only used to manufacture small chips for cryptocurrency mining

Samsung claims that SF3 will provide larger Design versatility allows for different nanosheet channel widths for different all-gate (GAA) transistors within the same cell type. Although Samsung did not directly compare SF3 and SF3E, they said that SF3 has significant improvements at the same power and complexity, such as a 22% increase in performance. In addition, under the same frequency and number of transistors, power consumption is reduced by 34%, and the logic area is also reduced by 21%. It should be noted that Samsung states that these improvements are relative to SF4 (4LPP, 4nm level, low power consumption)

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