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Japanese research team creates new niobium telluride material, which is expected to be used as a raw material for phase change memory to reduce production costs
- WBOYforward
- 2023-09-12 12:01:051292browse
According to news from this website on September 5, researchers from Tohoku University in Japan recently used sputtering technology to create niobium telluride (NbTe4) material. It is reported that this material has "excellent storage and thermal properties" and is expected to be used in phase variable memory manufacturing, thereby providing the industry with more raw material choices and reducing related costs. The paper has been published and archived on the online library platform.
After inquiry, this site learned that phase change memory (PCM) is a memory technology that "applies phase change materials as storage media". Compared with the current flash memory, phase change memory uses phase change The solid and liquid state of matter changes to save data (the writing speed of flash memory is limited by the speed of charge movement), so its reading and writing speed is faster, the storage density is higher, the power consumption is lower, and the size can be smaller, but the cost of manufacturing phase change memory media is too high. Currently, phase change memory is still at the enterprise level and has not yet been released to the home market.
Researchers use sputtering technology to create materials. It is reported that "sputtering is a A widely used technology that mainly deposits thin films of materials onto substrates to achieve precise control of film thickness and composition." The researchers annealed at a temperature above 272 ºC to form niobium telluride (NbTe4) crystals. This material has an ultra-low melting point of about 447 ºC and is therefore relatively physically stable and suitable for manufacturing phase change memories.
The researchers evaluated the crystal, which is said to be similar to the traditional phase change Compared with memory compounds, niobium telluride (NbTe4) crystals have higher thermal stability, and the speed of crystallization conversion to liquid state is also quite fast (about 30 nanoseconds), highlighting its potential as a raw material for phase change memory. potential.
Shuang, assistant professor at the Institute of Advanced Materials Science of Northeastern University, claimed: "We have opened up new possibilities for the development of high-performance phase change memory. NbTe4 has a low melting point, high crystallization temperature and excellent conversion performance, which is a solution to "One of the ideal materials" currently facing the cost challenge of phase change memory."
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