Sources say SK Hynix’s five-layer stacked 3D DRAM memory yield has reached 56.1%

According to news from this website on June 24, Korean media BusinessKorea reported that industry insiders revealed that SK Hynix published the latest research paper on 3D DRAM technology at the VLSI 2024 Summit held in Hawaii, USA from June 16 to 20.

In this paper, SK Hynix reports that its five-layer stacked 3D DRAM memory yield has reached 56.1%. The 3D DRAM in the experiment exhibits similar characteristics to the current 2D DRAM.

According to reports, unlike traditional DRAM, which arranges memory cells horizontally, 3D DRAM vertically stacks cells to achieve higher density in the same space.

However, SK Hynix pointed out that unlike the stable operation of 2DDRAM, 3DDRAM exhibits unstable performance characteristics and requires stacking of 32 to 192 layers of memory cells to achieve universal application.

This site has noticed that Samsung is developing 16-layer stacked 3D DRAM and announced at the MemCon 2024 exhibition in March this year that it plans to commercialize 3D DRAM products around 2030.

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