Our country's scientific research team completed preliminary verification of new photoresist technology, which has better performance than most commercial photoresists

According to Hubei Jiufengshan Laboratory, as an indispensable material for semiconductor manufacturing, photoresist quality and performance are key factors affecting the electrical performance, yield and reliability of integrated circuit circuits. However, the technical threshold for photoresist is high, and there are only a handful of photoresist products on the market that have high process stability, wide process tolerance, and strong universal applicability. When semiconductor manufacturing chips reach 100 nm or even below 10 nm, how to produce photolithography patterns with high resolution, excellent cross-sectional morphology, and low line edge defects has become a common problem in photolithography manufacturing.

In response to the above bottleneck problem, Jiufengshan Laboratory and Huazhong University of Science and Technology formed a joint research team, supported the Huazhong University of Science and Technology team to break through the "chemical amplification photoresist with dual non-ionic photoacid synergistically enhanced response" technology.

Through ingenious chemical structure design, this research uses two photosensitive units to construct a "chemical amplification photoresist with dual non-ionic photoacid synergistically enhanced response", and finally obtains the lithography image morphology and line edge roughness Excellent accuracy, the standard deviation (SD) of the normal distribution of space pattern width values ​​is extremely small (about 0.05), and performance is better than most commercial photoresists. Moreover, the time required for each step of photolithography and development fully meets the requirements for throughput and production efficiency in semiconductor mass production manufacturing.

The research results are expected to provide clear directions for common problems in photolithography manufacturing, and at the same time provide technical reserves for the development of EUV photoresist.

The relevant results, titled "Dual nonionic photoacids synergistically enhanced photosensitivity for chemical amplified resists", were published in top international publications on February 15, 2024 Published in Chemical Engineering Journal (IF=15.1).

This project is co-funded by the China Natural Science Foundation (1973 Program, mainly as Professor Zhu Mingqiang of the Optoelectronics National Research Center of Huazhong University of Science and Technology, Professor Shi Jun and Dr. Xiang Shili of the Hubei Jiufengshan Laboratory Technology Center.)

Relying on the Jiufengshan laboratory process platform, the above-mentioned photoresist system with independent intellectual property rights has completed preliminary process verification on the production line, and simultaneously completed the detection and optimization of various technical indicators , realizing the entire chain from technology development to achievement transformation.

Attached to the paper link on this site:

https://doi.org/10.1016/j.cej.2024.148810

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