Samsung is developing CMM-H hybrid memory module: simultaneously connecting DRAM memory and NAND flash memory through CXL technology

According to news from this site on March 21, according to the China Flash Memory Market Summit 2024 briefing released by Samsung Semiconductor’s WeChat public account, it is developing CMM-H hybrid storage CXL modules. This module contains both DRAM memory and NAND flash memory.

Note from this site: As a new high-speed interconnection technology, CXL can provide higher data throughput and lower transmission delay, and can establish efficient connections between the CPU and external devices.

According to the diagram provided by Samsung, this module can directly transfer block I/O between the flash memory part and the CPU via the CXL interface, and can also implement 64-byte memory via the DRAM cache and CXL interface. I/O transfer.

CMM-H modules enable fine-grained access, lower TCO, and are also a possible persistent memory option.

According to the roadmap displayed by Samsung, it plans to produce a prototype CMM-H product in the first half of this year. The prototype will feature an FPGA-based CXL 1.1 controller in the E3.L 2T form factor with a maximum capacity of 4TB and a maximum bandwidth of 8GB/s.

Looking forward to the future commercial mass production of CMM-H modules, its mature ASIC-based controller will support the CXL 3.0 specification, with a maximum optional capacity of 16TB and a maximum bandwidth of 64GB/s, which will be ready in 2026. .

In addition, in terms of the more traditional CXL-D pure memory CXL storage module, Samsung plans to sample a second-generation product with a capacity of 128GB in the first quarter of next year, which uses 1b nm process DRAM particles and has a speed of 6400MT/ s.

Next year Samsung will also enrich its second-generation CXL-D module product line, with 512GB and 256GB capacity products to follow.

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