Samsung delivers HBM3E memory sample “Shinebolt” with bandwidth up to 1.228TB/s

Samsung recently confirmed that it will name its fifth-generation HBM3E product "Shinebolt", according to a news report from Korean media businesskorea

##▲ Source: Korean media businesskorea

Korean media said that Samsung has begun to provide customers with samples called "Shinebolt" for quality testing. The sample specification is 8-layer 24GB. In addition, Samsung also plans to complete the development of 12-layer 36GB products soon

The maximum data transfer speed (bandwidth) of Shinebolt is about 50% higher than HBM3, reaching 1.228TB/s, although Samsung The HBM development and production speed lags behind SK Hynix to some extent, but Samsung still plans to regain the leading position in advanced memory production.

The key to HBM is how each layer is connected. Samsung has been using the thermal compression non-conductive film (TC-NCF) process, while SK Hynix uses the mass reflow molded underfill (MR-MUF) process. However, which process is better still needs to be judged by the market

Since Samsung lagged behind SK Hynix in the development and production speed of HBM, they began to re-formulate their strategies to regain market share. Currently, Samsung is considering accelerating the development of HBM’s “hybrid connection” process to change the rules of the game.

This site also found that Samsung Memory Business President Li Zhengpei had previously stated: “We are currently producing HBM3 and have successfully developed the next First-generation product HBM3E, we will further expand the production of HBM to meet customer needs."

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