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Micron released an eye-catching news today, announcing the further expansion of its 1β (1-beta) process node technology and the launch of a new 16Gb DDR5 memory product
According to Micron’s announcement, 1β DDR5 DRAM is already available to data centers and PC users. The peak speed of this memory can reach an astonishing 7200 MT/s, providing users with better performance and efficiency.
According to the editor’s understanding, this innovative DDR5 memory uses advanced high dielectric constant CMOS device technology, as well as 4-phase clock and clock synchronization technology. Compared with the previous generation product, its performance has been improved by 50%, and its performance per watt has been improved by 33%. This technological breakthrough makes 1β DDR5 DRAM ideal for data center and client applications. This new 1β DDR5 DRAM product line offers module densities from 4800 MT/s to 7200 MT/s to meet Data center and client applications with different needs.
Brian Callaway, corporate vice president of Micron’s Core Computing Design Engineering Group, emphasized the importance of this development. He said: "The mass production and availability of 1β DDR5 DRAM marks an important milestone for the industry. Our close collaboration with ecosystem partners and customers will accelerate the adoption of these high-performance memory products."
In addition, Micron’s 1β technology supports multiple memory-based solutions, including DDR5 using 16Gb, 24Gb and 32Gb DRAM chips RDIMM and MCRDIMM, as well as LPDDR5X, HBM3E and GDDR7 using 16Gb and 24Gb DRAM chips. 16Gb DDR5 memory products will be sold through direct sales and channel partners to provide users with more choices.
After dismantling the iPhone 15 Pro, TechInsights discovered that Micron’s latest ultra-high-density D1β (D1b) LPDDR5 16Gb DRAM chip is used inside. This means that Micron has entered the D1β field for the first time and made an important contribution to the improvement of mobile device performance
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