Fast charging head is expected to be "cabbage price", Japanese company's new technology will reduce the cost of gallium nitride semiconductor materials by 90%

According to news from this site on September 5, Shin-Etsu Chemical Industries, Japan's largest semiconductor wafer company, and OKI Company, which is engaged in ATM and communication equipment, recently announced that they have developed a low-cost manufacturing method using gallium nitride (GaN ) Power semiconductor material technology.

According to reports, this technology can reduce manufacturing costs to less than one-tenth of traditional manufacturing methods. If it can be mass-produced, it will help popularize equipment such as fast chargers.

This site learned from the official press release that The new technology developed by Shin-Etsu Chemical Industry and OKI can spray gallium series gas on a unique QST substrate to grow crystals. Shin-Etsu Chemical Industry's thickened crystal technology is combined with OKI's bonding technology to lift only the crystal from the substrate. The crystal is placed on other substrates and used as wafers for power semiconductors.

▲ Picture source OKI

Shin-Etsu Chemical Industry stated that the method of growing GaN crystals on GaN substrates is not only costly in manufacturing Time, yield is still poor, and cost is high. The new manufacturing method can efficiently manufacture crystals and reduce costs by 90%. Compared with the method of growing GaN crystals on a silicon substrate, there is no need for an insulating layer between the substrate and the crystal. Coupled with the thickening of the crystal film, 20 times the current can be passed.

Shin-Etsu Chemical Industry revealed that this technology can produce 6-inch wafers, and hopes to increase it to 8 inches in 2025. It will also consider expanding to wafers in the future. Semiconductor manufacturers sell technology and other business models.

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