What is the Chinese meaning of DRAM memory?

The Chinese meaning of DRAM memory is dynamic random access memory; random access memory is divided into static random access memory and dynamic random access memory; the main principle of DRAM memory is to use the amount of charge stored in the capacitor to represent whether a binary bit is 1 or 1 0.

The operating environment of this tutorial: Windows 7 system, Dell G3 computer.

What is the Chinese meaning of DRAM memory?

The Chinese meaning of DRAM memory is dynamic random access memory.

Random access memory (RAM) is divided into static random access memory and dynamic random access memory. Static random access memory: fast read and write speed, high production cost, mostly used for cache memory with small capacity. Dynamic random access memory: slow in reading and writing speed, highly integrated, and mostly used for main memory with larger capacity.

Introduction to DRAM:

Dynamic Random Access Memory (DRAM) is a semiconductor memory. Its main principle is to use capacitors to store charges. The number of bits represents whether a binary bit (bit) is 1 or 0. Since transistors have leakage current in reality, the amount of charge stored on the capacitor is not enough to correctly identify the data, resulting in data corruption.

Therefore, periodic charging is an unavoidable requirement for DRAM. Because of this characteristic that requires periodic refresh, it is called "dynamic" memory. Relatively speaking, as long as static memory (SRAM) stores data, the memory will not be lost even if it is not refreshed.

Compared with SRAM, the advantage of DRAM is its simple structure - each bit of data only needs one capacitor and one transistor to process, compared to SRAM, which usually requires six transistors per bit. For this reason, DRAM has a very high density, a high capacity per unit volume and therefore a low cost. But on the contrary, DRAM also has the disadvantages of slow access speed and high power consumption.

Like most random access memories (RAM), DRAM is a volatile memory device because the data stored in it will disappear soon after the power is cut off.

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