Yangtze Memory once again "showed its sword" and sued Micron in the United States for infringement of 11 of its patents

News from this site on July 22, according to foreign media Tomshardware, Chinese 3D NAND flash memory manufacturer Yangtze Memory has recently taken Micron to court again, accusing Micron in the Northern District of California of infringing 11 patents of Yangtze Memory, involving 3D NAND Flash and DRAM products. Yangtze Memory also requested the court to order Micron to stop selling infringing memory products in the United States and pay patent royalties.

Yangtze Memory alleged that Micron’s:

1. 96 layer (B27A)
2. 128 layer (B37R)
3. 176 layer (B47R)
4. 232 layer (B58R) 3D NAND Flash

and Micron’s some DDR5 SDRAM products (Y2BM series) infringe 11 patents or patent applications submitted by Yangtze Memory in the United States.

In November 2023, Yangtze Memory sued Micron for patent infringement in the United States, involving 8 patents; in June 2024, Yangtze Memory sued a consulting company funded by Micron in the United States, accusing it of spreading false information. Now that Yangtze Memory has once again "showed its sword", this site will follow up on the follow-up litigation news.

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