4 times the nominal capacity TLC flash memory achieves 60DWPD endurance, Gigabyte AI TOP 100E solid-state drive solution confirmed

According to news from this site on June 24, Gigabyte has previously released the AI ​​TOP 100E solid-state drive for AI workloads. It is based on Phison aiDAPTIV+ technology and has an ultra-high endurance of about 60DWPD.

AI TOP 100E is M.2 2280 form factor, PCIe Gen4x4 specification, compliant with NVMe 1.4 protocol, sequential read and write up to 7200/6500 MB/s, the 1TB version has a nominal endurance of 109500TBW, and the 2TB version has double the endurance 219,000TBW.

Note from this site: DWPD is the (average) number of total disk writes per day, which is a common endurance standard for enterprise-class solid-state drives. The warranty period of AI TOP 100E is 5 years, which is exactly 60DWPD based on 365 days per year.

German media ComputerBase recently learned from Gigabyte officials that one of the important reasons for the high durability of the AI ​​TOP 100E is the use of TLC flash memory that far exceeds the nominal capacity and the help of pSLC (Static Simulation SLC) technology.

GIGABYTE AI TOP 100E SSDs are equipped with BiCS5 TLC flash memory particles that are 4 times the nominal capacity (that is, the 1TB version corresponds to 4TB flash memory, and the 2TB version corresponds to 8TB flash memory). These flash memories are not used directly as TLC, but turn on pSLC mode. Compress the capacity to 1/3 of the original size.

On this basis, this series of solid-state drives uses 1/4 of the flash memory particles as additional reserved space (i.e., additional OP area) to further alleviate the wear and tear of NAND flash memory and improve the durability of the solid-state drive.

This extraordinary NAND flash memory capacity configuration also explains why the maximum read and write power consumption of Gigabyte AI TOP 100E can reach more than 10W.

In addition, this solid-state drive is equipped with Phison PS5018-E18 master controller and is equipped with an external LPDDR4 cache at a common 1:1000 ratio.

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