Increasing 1b nm DRAM production capacity to meet HBM3E memory demand, sources say SK Hynix is ​​upgrading its M16 wafer fab

According to news from this site on June 17, according to Korean media The Elec, SK Hynix plans to significantly increase its 1b nm process DRAM memory production capacity to meet HBM3E memory demand.

HBM memory consumes much higher DRAM die than standard memory, so SK Hynix’s further expansion of 1b nm process DRAM production capacity will help alleviate the current shortage of HBM memory to a certain extent.

SK Hynix aims to increase the production of 1b nm memory wafers to 90,000 pieces by the end of this year and further increase to 140,000 to 150,000 pieces in the first half of next year.

To this end, SK Hynix plans to upgrade its M16 memory wafer fab in Icheon, Gyeonggi Province to the 1b nm process.

M16 currently produces 1y nm DRAM memory. A complete switch to 1b nm is expected to cause SK Hynix's 1y nm production capacity to drop to 50,000 wafers per month from the current 120,000.

Korean media quoted sources in the semiconductor equipment industry as saying that SK Hynix has put forward requirements for equipment movement and transformation of the M16 wafer fab, and plans to introduce only necessary deposition, photolithography and Etching core equipment.

Relevant people said that SK Hynix’s additional investment is still affected by the previous trough period of the storage industry, the overall decision-making process is very cautious, but the current growth of related orders has exceeded that of upstream equipment manufacturers initially expected.

This site reported in April that SK Hynix planned to complete the construction of the M15X DRAM memory fab in November 2025. Korean media mentioned that orders for related equipment are expected to begin in early 2025

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