Ultra-high brightness of 15,000 nits, Japan Semiconductor Energy Research Institute demonstrates miniature double-layer tandem OLEDoS display

According to news from this site on May 30, at the SID Display Week 2024 in mid-May, the Japan Semiconductor Energy Research Institute demonstrated a double-layer tandem OLEDoS (silicon-based OLEDoS) with a brightness of 15,000 nits. OLED) micro display.

▲ Picture source Guillaume Chansin

According to information shared by Guillaume Chansin, an analyst at the display industry research institution DSCC, on the X platform, the microdisplay is 1.5 inches in size , The resolution reaches 3840*2880, with a pixel density of 3207 PPI.

This 90Hz OLEDoS display uses square pixel units with a side length of 7.92μm. Each unit contains red and green sub-pixels of roughly equal size. One pixel of each, plus a blue subpixel about the size of the first two combined.

The Japan Semiconductor Energy Research Institute stated that the OLEDoS display uses a photolithography process for the deposition of luminescent materials.

The brightness indicator of 15,000 nits makes this microdisplay suitable for applications requiring ultra-high display brightness such as XR headsets.

According to this site’s inquiry, Samsung’s eMagin has demonstrated a single-layer micro RGB OLED display panel with a brightness of 15,000 nits in 2023, but with a lower resolution of 1920*1200.

The above is the detailed content of Ultra-high brightness of 15,000 nits, Japan Semiconductor Energy Research Institute demonstrates miniature double-layer tandem OLEDoS display. For more information, please follow other related articles on the PHP Chinese website!