SK Hynix, Samsung Electronics: More than 20% of the overall DRAM production line is used for HBM memory

According to news from this site on May 14, according to Korean media Hankyung, the two major storage giants SK Hynix and Samsung Electronics said when attending an investor event held earlier this month, Twenty percent of the overall DRAM production line has been used for the production of HBM memory. Compared with general-purpose DRAM, HBM memory has a higher unit price. However, due to poor TSV process yield and other reasons, the consumption of wafers is two or even three times that of traditional memory. Only by increasing the proportion of production lines can memory companies meet the growing demand for HBM.

It is against this background of "capacity occupation" that Samsung Electronics representatives predict that the price of not only HBM memory but also

general-purpose DRAM (such as standard DDR5) will not drop

during the year. SK Hynix once again confirmed that based on the production capacity as of the end of this year, the company has completed the allocation of HBM memory production capacity in 2025;

Samsung Electronics said that its HBM order status Similar to its competitors, it has also been sold out, and it is expected that there will not be an oversupply of HBM memory next year.

Samsung Electronics representatives confirmed

that the company’s HBM4 memory plans to complete development next year

and achieve mass production in 2026, and said that Samsung Electronics plans to start applying hybrid bonding in HBM4 memory. Earlier reports on this site mentioned that SK Hynix believes that it is unlikely to apply hybrid bonding on HBM4, and holds a view that is inconsistent with Samsung Electronics.

In addition, both companies are optimistic about the enterprise-level solid-state drive market. Representatives from Samsung Electronics believe that the growth of related demand will be a long-term trend.

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