Behind the 162.1 billion R&D expenses in one year: Huawei breaks through the US semiconductor blockade and develops 7nm performance mobile phones

February 5 news, according to foreign media reports, Chinese companies are working hard to catch up with the United States in research and development, and outstanding representatives include companies such as Huawei.

About 10 years ago in 2012, China's share is only 4.3%, but it is now continuing to rise. Although the United States ranks first, its share has been hovering around 40% for more than 10 years. The gap with China is shrinking year by year.

Huawei is the driving force behind the increase in R&D expenses of Chinese companies. The company invested 20.9 billion euros in research and development expenses in 2022, an increase of 11% from 2021, ranking first among Chinese companies and fifth among global companies.

Under pressure from the United States, Huawei spent about 10% to 20% of its sales on research and development expenses to promote research and development in communications, artificial intelligence (AI), semiconductors, etc.

Specifically, the five major companies with the most R&D expenses last year were Huawei, Tencent, Alibaba, China State Construction Engineering Corporation, and China Railway Group. The corresponding amounts were 20.9 billion euros (approximately 162.1 billion yuan) and 8.2 billion euros respectively. , 7.6 billion euros, 6.6 billion euros and 3.6 billion euros.

Looking at the companies with the top global shares, the first is Alphabet, the second is Meta, the third is Microsoft, and the fourth is Apple, all of which are American companies.

What I want to talk about in particular is Huawei. After investing so heavily in research and development (a long-term accumulation process), it has also achieved remarkable results. For example, in August 2023, Huawei launched a mobile phone equipped with high-speed communications equipment that is considered to have the Standard "5G" smartphones with comparable performance semiconductors. This is a high-performance product with a circuit line width of 7 nanometers. Due to restrictions on semiconductor procurement due to U.S. sanctions, it was independently put into practical use.

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