Baiwei Storage's wafer-level advanced packaging, testing and manufacturing project has landed in Songshan Lake, Dongguan, and has launched UFS 3.1 flash memory

According to news from this site on December 1, recently, the wafer-level advanced packaging and testing manufacturing project of Shenzhen Baiwei Storage Technology Co., Ltd. officially landed in Dongguan Songshan Lake High-tech Industrial Development Zone, and the signing ceremony was successfully held in Dongguan City.

According to reports, wafer-level advanced packaging and testing is a middle-end semiconductor manufacturing process between front-end wafer manufacturing and back-end packaging testing, using photolithography, etching, electroplating, PVD, CVD, Front-end wafer manufacturing processes such as CMP and Strip are used to implement process technologies such as bumping, rewiring (RDL), fan-in (Fan-in), fan-out (Fan-out), and through silicon via (TSV). Not only can the chip be packaged directly on the wafer, saving physical space, but also multiple chips can be integrated on the same wafer to achieve a higher integration level.

Baiwei Storage stated that the implementation of wafer-level advanced packaging and testing projects will help the company's products achieve greater bandwidth, higher speed, more flexible heterogeneous integration and lower energy consumption, empowering mobile Customers in application fields such as consumer electronics, high-end supercomputing, gaming, artificial intelligence, and the Internet of Things.

Baiwei Storage also revealed that the company has mastered advanced packaging technologies such as 16 laminated Die, 30~40μm ultra-thin Die, multi-chip heterogeneous integration, and provides packaging for NAND, DRAM chips and SiP Provide support for product innovation and large-scale mass production.

Shenzhen Baiwei Storage Technology Co., Ltd. was established in 2010 and focuses on the research and development, packaging, testing and manufacturing of memory chips. The company has been recognized as a national high-tech enterprise and a specialized new small giant enterprise, and has received strategic investment from a large national fund.

According to previous reports on this site, Baiwei has launched UFS 3.1 high-speed flash memory, writing The speed can reach up to 1800MB/s, which is more than 4 times that of the previous generation of general-purpose flash storage. The read speed can reach 2100MB/s and the capacity can reach 256GB (512GB and 1TB capacities will be launched in the future). The size is 11.5× 13.0×1.0mm, used for flagship smartphone products.

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