Samsung releases next-generation HBM3E DRAM, Shinebolt leads AI data center innovation

News on October 21st, Samsung made a grand appearance at today’s Storage Technology Day event and released a series of new products, including the next generation HBM3E DRAM, named "Shinebolt", is designed to meet the application needs of next-generation AI data centers.

According to the editor’s understanding, Samsung said that the “Shinebolt” HBM3E DRAM has a speed of up to 9.8Gbps per pin, which will bring an astonishing 1.2 With a TBps transfer rate, this breakthrough technology is expected to reduce the total cost of ownership (TCO) of data centers and significantly improve the efficiency of AI model training and inference tasks.

In order to achieve more layer stacking and improve heat dissipation efficiency, Samsung has also optimized the non-conductive film (NCF) technology, which will reduce the number of layers between chips. gap and maximize thermal conductivity.

In addition to “Shinebolt”, Samsung also announced on the spot that its 8H and 12H HBM3 products are currently in mass production, and “Shinebolt” samples have begun shipping to customers. As a comprehensive solution provider in the semiconductor field, Samsung plans to provide customers with customized one-stop services that organically combine next-generation HBM, advanced packaging technology and foundry products.

At this event, Samsung also unveiled a number of other new products, including 32Gb DDR5 DRAM with the highest capacity in the industry, and the industry’s first 32Gbps GDDR7. In addition, they also introduced petabyte-level PBSSD, which significantly improves the storage capabilities of server applications and provides more powerful support for data centers.

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