It is reported that Nvidia has tested Samsung's 3nm GAA process and will mass produce it as soon as 2025.

According to the news from mobile phone chip expert @手机 Chipmaster, it is reported that Nvidia has been in contact with Samsung about the 3nm GAA process. If all goes well, mass production is expected to begin in 2025

Hardwaretimes has previously reported that the next-generation NVIDIA flagship graphics card RTX 5090 will use 3nm process, expected to be launched by the end of next year.

The NVIDIA RTX 40 series graphics card is code-named Ada Lovelace, while the next-generation RTX graphics card is code-named Blackwell. The number of transistors will exceed 15 billion and the density will be close to 300 million/mm². The core clock will be over 3 Ghz and the bus density will be 512 bits.

According to the news leaked by foreign media Club 386 earlier, The RTX 5090 based on GB102 contains 144 groups of SM units, which is 18432 CUDA (assuming that each group of SM is still 128 CUDA), which is better than the RTX 4090 12.5% ​​more, 96MB L2 cache, matching GDDR7 video memory (384bit width), supporting PCIe 5.0 x16.

MSI previously demonstrated the heat dissipation design of the next-generation NVIDIA RTX flagship graphics card at the Taipei Computex Computer Show

As can be seen from the picture, MSI used Dynamic Bimetallic Fin (Dynamic Bimetallic Fin ), six through-type pure copper heat pipes and large-area aluminum fins are also embedded with copper sheets to further enhance heat dissipation, and there are also corresponding copper sheets in the video memory area. This shows that the next generation of graphics cards will be targeted at heat dissipation. Design with focus.

▲ Picture source Club 386

##▲ Picture source Club 386

Based on the currently disclosed information and corresponding heat dissipation conditions, it can be expected that the power consumption and heat generation of RTX 5090 will leave a deep impression on people

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