Hynix is the first to demonstrate UFS 4.1 flash memory: based on V9 TLC NAND particles-Mobile News-php.cn

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Hynix is the first to demonstrate UFS 4.1 flash memory: based on V9 TLC NAND particles

王林

Aug 09, 2024 pm 03:33 PM

cell phoneflash memorysk hynixAndroid phoneFast technology

According to news on August 9, at the FMS 2024 Summit, SK Hynix demonstrated its latest storage products, including UFS 4.1 universal flash memory that has not yet officially released specifications.

海力士抢先展示UFS 4.1闪存：基于V9 TLC NAND颗粒打造

According to the official website of JEDEC Solid State Technology Association, the latest UFS specification currently announced is UFS 4.0 in August 2022. Its theoretical interface speed is as high as 46.4Gbps. It is expected that UFS 4.1 will further improve the transmission rate.

海力士抢先展示UFS 4.1闪存：基于V9 TLC NAND颗粒打造

1. Hynix demonstrated 512GB and 1TB UFS 4.1 universal flash memory products, based on 321-layer V9 1Tb TLC NAND flash memory.

SK Hynix also exhibited 3.2Gbps V9 2Tb QLC and 3.6Gbps V9H 1Tb TLC particles.
Hynix demonstrated ZUFS (Zoneed UFS, Zoned UFS) samples based on V7 512Gb TLC NAND, available in 512GB and 1TB capacities. ZUFS 4.0 is expected to enter mass production in the third quarter of this year.
The launch of UFS 4.1 Universal Flash Memory will improve the performance of smartphones and mobile devices.

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