SK Hynix will display new AI-related products on August 6: 12-layer HBM3E, 321-high NAND, etc.

According to news from this site on August 1, SK Hynix released a blog post today (August 1), announcing that it will attend the Global Semiconductor Memory Summit FMS 2024 to be held in Santa Clara, California, USA from August 6 to 8, to demonstrate Many new generation products.

Introduction to Future Memory and Storage

Formerly known as the Flash Memory Summit, which was mainly for NAND suppliers. In the context of increasing attention to artificial intelligence technology, this year it was renamed Future Memory and Storage. Storage Summit (Future Memory and Storage) to invite more participants such as DRAM and storage vendors.

New Products

SK Hynix announced the development of the industry's highest 321-layer NAND at the FMS event last year. This year it will also display many new products in the AI ​​field, including 12-layer HBM3E (expected to be mass-produced in the third quarter) and 321 -high NAND (will start shipping in the first half of next year). Attached to this site are the new products that SK Hynix will display soon:

Starting from the upper left and going clockwise, they are 321-layer NAND flash memory, ZUFS 4.0, PS1010 and PCB01

Starting from the upper left and going clockwise Speeches for LPDDR5T, HBM3E, CMS 2.0 and GDDR6-AiM

SK hynix HBM Process Integration Director Unoh Kwon and SSD PMO Director Chunsung Kim will deliver a speech titled "AI Memory and Storage Solutions in the Artificial Intelligence Era" at the opening ceremony of the event Keynote speech on Leadership and Vision.

The two executives will introduce the company's DRAM and NAND product portfolios, as well as artificial intelligence memory solutions optimized for artificial intelligence.

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