Sources say Samsung Electronics is considering using 1cnm process DRAM for HBM4 memory to improve energy efficiency competitiveness

According to news from this site on May 17, Korean media ZDNet Korea reported today that Samsung Electronics is considering using the 1c nm process (sixth generation 10+nm level) DRAM bare for HBM4 memory. tablets to enhance the competitiveness of its products in aspects such as energy efficiency.

Samsung Electronics representatives said at the industry conference Memcon 2024 earlier this year that the company plans to achieve mass production of the 1c nm process by the end of this year; and in terms of HBM4, Samsung Electronics expects to complete the new AI next year Memory development and mass production in 2026.

In the HBM3E that is currently in mass production, Samsung does not use 1b nm process DRAM die like its competitors SK Hynix and Micron, but still uses 1a nm particles. At a disadvantage in terms of energy consumption.

This is considered by sources to be an important incentive for Samsung to internally consider introducing 1c nm DRAM particles on HBM4.

This site learned that the first batch of DRAM products at the same process node are generally standard DDR/LPDDR products for the desktop and mobile markets. After they mature, they will be used in high-value and low-yield HBM. Introducing new process.

Sources also said that executives and working groups related to Samsung Electronics’ HBM business also plan to shorten the development time cycle of HBM4 simultaneously to keep up with the needs of AI processor manufacturers. But this will inevitably bring greater yield risk.

SK Hynix, the current leader in the field of HBM memory, has expressed its intention to introduce 1c nm process particles on HBM4E, but it has not yet officially confirmed which process of DRAM HBM4 memory will use.

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