Sources say Samsung Electronics’ 8-layer stacked HBM3E memory has not yet been officially verified by NVIDIA

According to news from this site on May 13, Korean media AlphaBiz reported that Samsung Electronics’ 8-layer stacked (8Hi) HBM3E memory has not officially passed NVIDIA’s test and still needs further verification.

TSMC not only provides advanced AI GPU foundry to NVIDIA, but is also responsible for the CoWoS advanced packaging between AI GPU and HBM memory, so it is also an important participant in NVIDIA's verification and review process.

A source familiar with the supply relationship between Samsung Electronics and NVIDIA told Korean media that the verification process of Samsung Electronics 8Hi HBM3E is stuck in the TSMC approval process.

The source claimed that the main reason why Samsung products failed to pass the test was that TSMC "adopted testing standards based on SK Hynix's HBM3E products" in testing.

There are many differences between Samsung Electronics and SK Hynix in the process of HBM3E memory. For example, the former uses TC-NCF (note on this site: hot pressed non-conductive film) keys Together, the latter uses MR-RUF (batch reflow molded underfill), which will inevitably affect the parameters to a certain extent.

Sources believe that if the testing standards for Samsung electronic products are adjusted, it will "not be a problem" for Samsung HBM3E memory to pass Nvidia's supply test.

Samsung Electronics previously stated that its 8Hi HBM3E memory entered mass production last month, and mass production of 12Hi HBM3E will also be achieved this quarter.

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