Samsung Electronics: It is advancing the eMRAM memory process upgrade as planned, and the development of the 8nm version has basically been completed

According to news from this site on May 31, representatives of Samsung Electronics stated at the "AI-PIM Seminar" in South Korea yesterday that they are gradually advancing the process upgrade of eMRAM memory as planned. At present, the technology development of 8nm eMRAM has been basically completed.

As a new type of memory, MRAM is based on the magnetic principle and is non-volatile. It does not need to continuously refresh data like DRAM memory and is more energy-saving and efficient;

At the same time, the writing speed of MRAM is 1,000 times that of NAND, supporting applications that require higher writing rates.

▲eMRAM storage principle

eMRAM is MRAM for the embedded field.

Samsung Electronics currently has the production capacity of 28nm eMRAM and is already supplying end products such as smart watches.

According to reports from this site in 2023, Samsung Electronics stated at the time that it planned to mass produce 14nm eMRAM in 2024; mass produce 8nm eMRAM in 2026; and will go one step further by 2027 to achieve mass production of 5nm process eMRAM.

At present, Samsung Electronics

has completed the development of 14nm eMRAM, and the development of 8nm eMRAM has also been basically completed. It still plans to launch 5nm eMRAM in 2027.

Samsung Electronics believes that the demand for eMRAM in the automotive field will continue to grow in the future. Its products currently have a temperature resistance of 150~160°C, which is enough to meet the automotive industry's stringent requirements for semiconductors.

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