TSMC: 2nm node is progressing smoothly, and N3X and N2 processes will be launched in the second half of 2025-It Industry-php.cn

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TSMC: 2nm node is progressing smoothly, and N3X and N2 processes will be launched in the second half of 2025

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Jun 03, 2024 pm 10:28 PM

TSMCAdvanced process

News from this site on May 24, according to Taiwan media "MoneyDJ Financial Network", TSMC executives stated at the 2024 Technology Forum Hsinchu that its 2nm node using Nanosheet nanosheets (GAA transistors) is progressing smoothly.

TSMC's joint deputy COO Zhang Xiaoqiang said that TSMC's 2nm process is progressing "very smoothly": the current "conversion performance" of nanosheets has reached the target of 90%, and according to the yield calculation, it has also exceeded 80%.

TSMC believes that its N2 process will continue to be the leading technology in the foundry industry when it is launched in 2025.

▲ Zhang Xiaoqiang on the forum. Source: TSMC official social media news

According to foreign media Anandtech, TSMC will achieve mass production of the N2 process in the second half of 2025. During the same period, it will also bring the N3X process in the 3nm family for HPC applications.

The N3X process has a higher maximum voltage of 1.2V. Compared with the N3P process, the power consumption is reduced by 7% at the same frequency, and the performance is improved by 5% at the same area. At the same frequency, Density increased by 10%. According to previous reports from this site, this node is expected to receive film production starting this year.

In the second half of 2026, TSMC will mass produce two 2nm family variant processes: N2P and A16.

Compared with the N2 process, the N2P process will reduce power consumption by 5~10% at the same frequency and density, and improve performance by 5~10% at the same density and power consumption.

At the A16 node, TSMC will officially introduce backside power supply technology. This process can increase the frequency by 8~10% under the same operating voltage; reduce the power consumption by 15~20% at the same frequency, and increase the density by up to 10%.

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